DocumentCode
1941858
Title
AlInAs/GaInAs MESFETs Grown by MBE
Author
Giraudet, L. ; Allovon, M. ; Renaud, J.Ch. ; Scavennec, A.
Author_Institution
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, Avenue Henri Ravera - 92220 Bagneux - FRANCE
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
891
Lastpage
894
Abstract
Field Effect Transistors have been fabricated on AlInAs/GaInAs/InP heterostructures grown by molecular beam epitaxy (MBE). Very low gate leakage currents (20 nA at - 5 V gate bias) were obtained together with transconductances of 90-100 mS/mm on devices with a 3 ¿m gate length. High frequency measurements were performed showing a cutoff frequency for the maximum available gain of 20 GHz. These characteristics make this type of FET very promising for microwave and integrated optoelectronics applications such as large bandwidth photoreceivers.
Keywords
Cutoff frequency; Frequency measurement; Indium phosphide; Leakage current; MESFETs; Microwave FETs; Microwave devices; Molecular beam epitaxial growth; Performance evaluation; Performance gain;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436782
Link To Document