Title :
AlInAs/GaInAs MESFETs Grown by MBE
Author :
Giraudet, L. ; Allovon, M. ; Renaud, J.Ch. ; Scavennec, A.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, Avenue Henri Ravera - 92220 Bagneux - FRANCE
Abstract :
Field Effect Transistors have been fabricated on AlInAs/GaInAs/InP heterostructures grown by molecular beam epitaxy (MBE). Very low gate leakage currents (20 nA at - 5 V gate bias) were obtained together with transconductances of 90-100 mS/mm on devices with a 3 ¿m gate length. High frequency measurements were performed showing a cutoff frequency for the maximum available gain of 20 GHz. These characteristics make this type of FET very promising for microwave and integrated optoelectronics applications such as large bandwidth photoreceivers.
Keywords :
Cutoff frequency; Frequency measurement; Indium phosphide; Leakage current; MESFETs; Microwave FETs; Microwave devices; Molecular beam epitaxial growth; Performance evaluation; Performance gain;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
