Title :
Current-Injection Analysis of Invertible InGaAsP/InP Double-Hetero-Structure Bipolar Transistors
Author :
Bach, H.-G. ; Grote, N. ; Fiedler, F.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Integrierte Optik, Einsteinufer 37, D-1000 Berlin 10, FRG
Abstract :
High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applications have been fabricated on the InGaAsP/InP material system. Forward and reverse current gain evaluation was supported by analyses of forward I-V curves of test-diodes representing the injecting heterojunctions and a current blocking InP homojunction diode. The influence of different LPE methods (step cooling, two-phase solution technique) on the static performance of the DHBTs was studied.
Keywords :
Bipolar transistors; DH-HEMTs; Doping; Driver circuits; Gold; Indium phosphide; Laser applications; Optical materials; Testing; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
