• DocumentCode
    1941899
  • Title

    Current-Injection Analysis of Invertible InGaAsP/InP Double-Hetero-Structure Bipolar Transistors

  • Author

    Bach, H.-G. ; Grote, N. ; Fiedler, F.

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Integrierte Optik, Einsteinufer 37, D-1000 Berlin 10, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    883
  • Lastpage
    886
  • Abstract
    High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applications have been fabricated on the InGaAsP/InP material system. Forward and reverse current gain evaluation was supported by analyses of forward I-V curves of test-diodes representing the injecting heterojunctions and a current blocking InP homojunction diode. The influence of different LPE methods (step cooling, two-phase solution technique) on the static performance of the DHBTs was studied.
  • Keywords
    Bipolar transistors; DH-HEMTs; Doping; Driver circuits; Gold; Indium phosphide; Laser applications; Optical materials; Testing; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1941899