Development of a novel system for characterizing MOSFET noise in higher frequency regimes

We present a novel approach for measuring high-frequency components of the MOSFET noise under DC bias. For this purpose, a probe card equipped with a preamp has been devised so that the signal of the drain current can be amplified with lesser loss. Using the probe card, we demonstrate that the noise properties of MOSFET up to 40 MHz are successfully measured.