Physical modeling of surface and heterojunction for mesa-structured HBTs

Author

Kan, E.C. ; Dutton, R.W.

Author_Institution

Appl. Electron. Lab., Stanford Univ., CA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

171

Lastpage

174

Abstract

Mesa-structured heterojunction bipolar transistors are analyzed by 2D device simulation, with emphasis on the treatment of exposed base surface and emitter-base heterojunction. Physical models for surface (surface recombination velocity and surface traps) and heterojunction (thermionic/diffusion and base dopant back diffusion) are compared to illustrate their effects on terminal characteristics. A strategy to assure accurate modeling is suggested.

Keywords

carrier density; diffusion; electron traps; heterojunction bipolar transistors; p-n heterojunctions; semiconductor device models; surface recombination; surface states; thermionic electron emission; 2D device simulation; base dopant back diffusion; emitter-base heterojunction; exposed base surface; heterojunction bipolar transistors; mesa-structured HBTs; physical modeling; surface recombination velocity; surface traps; terminal characteristics; thermionic emission; Analog circuits; Dielectric constant; Electron traps; Heterojunction bipolar transistors; Insulation; Passivation; Poisson equations; Semiconductor process modeling; Surface treatment; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528987

Filename

528987