DocumentCode
1942125
Title
Monolithic Integration of a GaInAs JFET and a GaInAs Photodiode
Author
Dawe, P.J.G. ; Spear, D.A.H. ; Thompson, G.H.B. ; Antell, G.R.
Author_Institution
STC Technology Ltd., London Road, Harlow, Essex, CM17 9NA, England
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
947
Lastpage
950
Abstract
Monolithically integrated GaInAs/InP pin/JFETs have been made from LPE grown material. The method of integration allows the pin and JFET to be optimised independently, while keeping stray capacitance extremely low. Similar JFETs have also been made by MOVPE.
Keywords
Capacitance; Epitaxial layers; FETs; Indium phosphide; Monolithic integrated circuits; Optical materials; Optical receivers; Photodiodes; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436795
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