Title :
Monolithic Integration of a GaInAs JFET and a GaInAs Photodiode
Author :
Dawe, P.J.G. ; Spear, D.A.H. ; Thompson, G.H.B. ; Antell, G.R.
Author_Institution :
STC Technology Ltd., London Road, Harlow, Essex, CM17 9NA, England
Abstract :
Monolithically integrated GaInAs/InP pin/JFETs have been made from LPE grown material. The method of integration allows the pin and JFET to be optimised independently, while keeping stray capacitance extremely low. Similar JFETs have also been made by MOVPE.
Keywords :
Capacitance; Epitaxial layers; FETs; Indium phosphide; Monolithic integrated circuits; Optical materials; Optical receivers; Photodiodes; Substrates; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
