• DocumentCode
    1942128
  • Title

    Evaluation of dynamic bonding stress and interlayer cracking using a combo sensor

  • Author

    Miki, Yoshihiko ; Watanabe, Hirobumi

  • Author_Institution
    Corp. Technol. Dev. Group, Ricoh Co., Ltd., Ikeda, Japan
  • fYear
    2012
  • fDate
    19-22 March 2012
  • Firstpage
    203
  • Lastpage
    205
  • Abstract
    Crack defect in the interlayers of semiconductor chips due to assembly stress can be a serious problem. To analyze the crack-generating stress, we fabricated a combo sensor that enables simultaneous evaluation of stress and cracking under the bonding pad. Dynamic analysis of the bonding process with this sensor in situ showed that the cracks are generated by stress concentration in alloy aggregates that form during the initial stage of ultrasonic bonding.
  • Keywords
    crack-edge stress field analysis; monolithic integrated circuits; sensors; ultrasonic bonding; assembly stress; bonding pad; bonding process dynamic analysis; combo sensor; crack defect; crack-generating stress analysis; dynamic bonding stress evaluation; interlayer cracking; semiconductor chips; stress concentration; stress simultaneous evaluation; ultrasonic bonding; Coordinate measuring machines; Facsimile; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4673-1027-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.2012.6190647
  • Filename
    6190647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1942128