Title :
Evaluation of dynamic bonding stress and interlayer cracking using a combo sensor
Author :
Miki, Yoshihiko ; Watanabe, Hirobumi
Author_Institution :
Corp. Technol. Dev. Group, Ricoh Co., Ltd., Ikeda, Japan
Abstract :
Crack defect in the interlayers of semiconductor chips due to assembly stress can be a serious problem. To analyze the crack-generating stress, we fabricated a combo sensor that enables simultaneous evaluation of stress and cracking under the bonding pad. Dynamic analysis of the bonding process with this sensor in situ showed that the cracks are generated by stress concentration in alloy aggregates that form during the initial stage of ultrasonic bonding.
Keywords :
crack-edge stress field analysis; monolithic integrated circuits; sensors; ultrasonic bonding; assembly stress; bonding pad; bonding process dynamic analysis; combo sensor; crack defect; crack-generating stress analysis; dynamic bonding stress evaluation; interlayer cracking; semiconductor chips; stress concentration; stress simultaneous evaluation; ultrasonic bonding; Coordinate measuring machines; Facsimile; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190647
