DocumentCode :
1942135
Title :
Statistical Defectivity Control for VLSI Devices
Author :
Traversini, R. ; De Lisio, A. ; Tosi, M. ; Barbuscia, G.
Author_Institution :
SGS Microelettronica, Via C. Olivetti, 2, 20041 Agrate Brianza (MI)- Italy
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
927
Lastpage :
930
Abstract :
A method used in designing test chips for defect monitorinig of VLSI processes is presented. The purpose of the method is to maximize the accuracy of defect density estimations. This is achieved by appropriate sizing of test chip structures. The optimal dimension of test structure is computed using a model relating the confidence interval for the defect density D with the sample size and test structure dimension. The Poisson and negative binomial yield models are used in the calculation. The application to real life VLSI processes is outlined.
Keywords :
Condition monitoring; Design methodology; Geometry; Manufacturing; Process control; Solid modeling; Statistical analysis; Statistical distributions; Testing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436796
Link To Document :
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