• DocumentCode
    1942441
  • Title

    Emitter Concentration and Interface Effects in the Base-Emitter Characteristics of A1GaAs/GaAs Heterojunction Bipolar Transistors

  • Author

    Cámara, P. ; Muñoz, E. ; Izpura, I. ; Lablanca, J. ; Lapeña, E. ; Pate, M.A. ; Hill, G. ; Mistry, P. ; Roberts, J.S. ; Hall, H.Y.

  • Author_Institution
    ETSI Telecomunicación, Univ. Politécnica Madrid, C. Universitaria 28040-Madrid , Spain
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    979
  • Lastpage
    982
  • Keywords
    Bipolar transistors; Doping; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Knee; MOCVD; Molecular beam epitaxial growth; Telecommunication standards; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1942441