DocumentCode
1942506
Title
Substrate Influences on the Activation of Ion-Implanted Si in GaAs
Author
Schnell, R.D. ; Schink, H.
Author_Institution
Siemens AG, Corporate Research and Development, D-8000 Mÿnchen 83, P.O. Box 830952, F.R.G.
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
43
Lastpage
46
Abstract
The influence of substrate material on Si-implanted CV-profiles is demonstrated on s.i. LEC grown GaAs. Local activation is affected by stoichiometry variations near dislocations. For higher concentrations the variations increase due to saturation effects. By co-implantation of As and enhanced implantation damage the activation is decreased and the dislocation influence increased.
Keywords
Capacitance measurement; Circuits; Doping profiles; Gallium arsenide; Large scale integration; Microscopy; Schottky diodes; Shape control; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436810
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