• DocumentCode
    1942517
  • Title

    Bipolar Heterojunction Transistors: Out of Models into Reality

  • Author

    Holden, A.J.

  • Author_Institution
    Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northants, NN12 8EQ, U.K.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    487
  • Lastpage
    496
  • Abstract
    The modelled and measured capabilities of the Bipolar Heterojunction Transistor are reviewed. The device is shown to have potential in high speed digital ICs and in microwave power amplification. It has demonstrated a world beating record for high speed divider circuits but is being hotly pursued by the Silicon Bipolar Junction Transistor. On paper it has promised much and it is now becoming a reality.
  • Keywords
    Bipolar transistors; CMOS logic circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; MOSFETs; Microwave devices; Microwave transistors; Optical interconnections; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436811