DocumentCode
1942517
Title
Bipolar Heterojunction Transistors: Out of Models into Reality
Author
Holden, A.J.
Author_Institution
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northants, NN12 8EQ, U.K.
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
487
Lastpage
496
Abstract
The modelled and measured capabilities of the Bipolar Heterojunction Transistor are reviewed. The device is shown to have potential in high speed digital ICs and in microwave power amplification. It has demonstrated a world beating record for high speed divider circuits but is being hotly pursued by the Silicon Bipolar Junction Transistor. On paper it has promised much and it is now becoming a reality.
Keywords
Bipolar transistors; CMOS logic circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; MOSFETs; Microwave devices; Microwave transistors; Optical interconnections; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436811
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