Title :
110 GHz amplifiers based on compact coplanar W-band receiver technology
Author :
Schlechtweg, N. ; Haydl, W.H. ; Braunstein, J. ; Tasker, P.J. ; Bangert, A. ; Reinert, W. ; Verweyen, L. ; Massler, H. ; Seibel, J. ; Zufle, K.H. ; Bronner, W. ; Fink, T. ; Hulsmann, A. ; Hofmann, P. ; Kaufel, G. ; Kohler, K. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
The potential of coplanar waveguide technology to build compact system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. Very good agreement between the measured and modelled data is achieved up to 120 GHz. A cascode MODFET small signal model working up to above 100 GHz has been developed for predictable MMIC design. Based on an accurate design database, a compact integrated amplifier utilizing cascode circuitry for application in the 100-120 GHz frequency band has been fabricated showing a measured maximum gain of 20 dB at 110 GHz. The gain is comparable to the result of a 2-stage amplifier fabricated using 0.1 /spl mu/m gate PHEMTs, while the chip size is reduced by more than 50%.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; S-parameters; coplanar waveguides; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; millimetre wave amplifiers; millimetre wave devices; power combiners; waveguide couplers; 100 to 120 GHz; 20 dB; GaAs; In/sub 0.25/Ga/sub 0.75/As-GaAs; MMIC design; S-parameters; Wilkinson combiner/divider; active MMIC components; capacitively loaded ultra miniature branch line coupler; cascode MODFET small signal model; cascode circuitry; compact coplanar W-band receiver technology; coplanar waveguide technology; design database; integrated amplifier; maximum gain; passive MMIC components; Coplanar waveguides; Coupling circuits; HEMTs; Integrated circuit measurements; MMICs; MODFET circuits; MODFET integrated circuits; Predictive models; Signal design; Waveguide components;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528997
