110 GHz amplifiers based on compact coplanar W-band receiver technology

Author

Schlechtweg, N. ; Haydl, W.H. ; Braunstein, J. ; Tasker, P.J. ; Bangert, A. ; Reinert, W. ; Verweyen, L. ; Massler, H. ; Seibel, J. ; Zufle, K.H. ; Bronner, W. ; Fink, T. ; Hulsmann, A. ; Hofmann, P. ; Kaufel, G. ; Kohler, K. ; Raynor, B. ; Schneider, J.

Author_Institution

Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

214

Lastpage

217

Abstract

The potential of coplanar waveguide technology to build compact system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. Very good agreement between the measured and modelled data is achieved up to 120 GHz. A cascode MODFET small signal model working up to above 100 GHz has been developed for predictable MMIC design. Based on an accurate design database, a compact integrated amplifier utilizing cascode circuitry for application in the 100-120 GHz frequency band has been fabricated showing a measured maximum gain of 20 dB at 110 GHz. The gain is comparable to the result of a 2-stage amplifier fabricated using 0.1 /spl mu/m gate PHEMTs, while the chip size is reduced by more than 50%.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; S-parameters; coplanar waveguides; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; millimetre wave amplifiers; millimetre wave devices; power combiners; waveguide couplers; 100 to 120 GHz; 20 dB; GaAs; In/sub 0.25/Ga/sub 0.75/As-GaAs; MMIC design; S-parameters; Wilkinson combiner/divider; active MMIC components; capacitively loaded ultra miniature branch line coupler; cascode MODFET small signal model; cascode circuitry; compact coplanar W-band receiver technology; coplanar waveguide technology; design database; integrated amplifier; maximum gain; passive MMIC components; Coplanar waveguides; Coupling circuits; HEMTs; Integrated circuit measurements; MMICs; MODFET circuits; MODFET integrated circuits; Predictive models; Signal design; Waveguide components;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528997

Filename

528997