DocumentCode
1942660
Title
Double Self Aligned Bipolar Transistors using Salicide Contacts
Author
Kabza, H. ; Reisch, M. ; Probst, V. ; Böhm, W. ; Fertsch, J. ; Schaber, H. ; Eggers, H.
Author_Institution
Siemens AG, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
1047
Lastpage
1050
Abstract
A new double self aligned fabrication process for bipolar transistors is presented by applying the self aligned silicide (salicide) process using Pt to poly-Si self aligned devices. Very low sheet resistivities for the external base region and therefore low base resistances are obtained. Temperature stability of the devices for annealing at 700°C for 60 min. is demonstrated. No silicide bridging is observed.
Keywords
Bipolar transistors; Circuit stability; Conductivity; Electrodes; Etching; Fabrication; Microelectronics; Silicidation; Silicides; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436817
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