• DocumentCode
    1942746
  • Title

    Highly integrated and compact W-band front-end for radiometry application

  • Author

    Camiade, M. ; Dourlens, C. ; Serru, V. ; Savary, P. ; Blanc, J.C.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • fYear
    1995
  • fDate
    Oct. 29 1995-Nov. 1 1995
  • Firstpage
    230
  • Lastpage
    237
  • Abstract
    Using conventional 0.25 /spl mu/m HEMT (VLN02 process) and pseudomorphic 0.15 /spl mu/m HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeter-wave functions and even the first stage of IF amplifier are fully integrated on MMIC technology according to a multifunction approach. A compact housing has been developed for chip integration. A high performance oscillator at LO sub-harmonic provides less than -93 dBc/Hz at 100 kHz from carrier at 46.6 GHz. The complete front-end assembly exhibits more than 20 dB conversion gain and less than 6.5 dB noise figure around 93.5 GHz RF frequency and 100 to 600 MHz associated IF frequency. To our knowledge this realization is the first report of a fully monolithic W-band complete front-end based on industrial HEMT technologies and dedicated to space applications.
  • Keywords
    HEMT integrated circuits; field effect MIMIC; millimetre wave measurement; millimetre wave receivers; radiometry; space vehicle electronics; 0.15 micron; 0.25 micron; 20 dB; 46.6 GHz; 6.5 dB; 93.5 GHz; HEMT; IF amplifier; LO sub-harmonic; W-band front-end; chip integration; conversion gain; high performance oscillator; industrial HEMT technologies; millimeter-wave functions; multifunction approach; radiometry application; space applications; Assembly; Energy consumption; Frequency conversion; Gain; HEMTs; MMICs; Millimeter wave technology; Oscillators; Radiometry; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    0-7803-2966-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1995.529001
  • Filename
    529001