Comparison of Rapid Annealing and Furnace Annealing of Si Implanted into GaInAs

The activation efficiency of conventionell furnace annealing (650°C-900°=C, 30 min, SiO2 cap, N2 ambient) and rapid thermal annealing (600°C-900°C, with and without SiO2 cap, N2 ambient) has been compared in Si doped GaInAs layers grown lattice matched by either OMVPE or LPE on InP. Carrier profiles and atomic profiles have been determined by selective Hall measurement, C/V profiling and SIMS measurements. For an implantation dose of 2*10¹⁴ cm^¿2 and rapid thermal annealing at 900 °C activation of 69 % with a sheet resistance of 20 ¿ is found. Rapid thermal annealing and furnace annealing lead to comparable activation efficiency and Hall mobility data. A broadening of carrier concentration profile for furnace annealing at 700°C, 30 min is observed. Rapid thermal annealing between 700°C and 900°C leads to no measurable change in Si profile. In case of low dose Si implantation in OMVPE grown layers highest activation (65 %) is achieved for rapid thermal annealing at 700°C. The electron mobility at a doping concentration of 10¹⁷ cm^¿3 is 5800 cm²V^-1s^¿1. For low dose Si implantation in LPE grown layers the activation is 100% after rapid annealing at 800°C. Long furnace annealing (700°C, 30 min ) results in an anomalous high carrier concentration at the surface.