High efficiency 850 nm wavelength GaAs VCSELs

Author

Michalzik, R. ; Jager, R. ; Weigl, B. ; Grabherr, M. ; Jung, C. ; Reiner, G. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

13

Lastpage

14

Abstract

We report on the optimization of selectively oxidized VCSELs incorporating GaAs quantum wells for multimode emission around 850 nm wavelength. Devices with active diameters between 5 and 12 /spl mu/m show maximum wallplug efficiencies exceeding 55%. Continuous wave operation is achieved up to +185/spl deg/C and the maximum single-mode output power corresponding to 30 dB sidemode suppression ratio is increased to 2.25 mW with layer structures exhibiting reduced index guiding of the optical wave.

Keywords

III-V semiconductors; gallium arsenide; infrared sources; laser cavity resonators; laser modes; laser transitions; optimisation; quantum well lasers; surface emitting lasers; 185 C; 2.25 mW; 5 to 12 mum; 55 percent; 850 nm; CW lasers; GaAs; GaAs VCSELs; GaAs quantum well lasers; active diameters; continuous wave operation; high efficiency; layer structures; maximum single-mode output power; maximum wallplug efficiencies; multimode emission; optical wave; optimization; reduced index guiding; selectively oxidized; sidemode suppression ratio; Current supplies; Electron emission; Gallium arsenide; Heat sinks; Power conversion; Power generation; Power lasers; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619082

Filename

619082