850 nm VCSEL´s with buried Al/sub x/O/sub y/ current apertures

Author

Chao-Kun Lin ; MacDougal, M.H. ; Geske, J. ; Bond, A.E. ; Won-Jin Choi ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

15

Lastpage

16

Abstract

Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 1.2 mW; 850 nm; GaAs-AlGaAs; GaAs-AlGaAs DBR QW VCSELs; VCSEL; buried Al/sub x/O/sub y/ current apertures; emission wavelength; high wall plug efficiency VCSELs; low current; low threshold current; peak optical output; short haul optical interconnections; vertical cavity surface emitting lasers; Apertures; Distributed Bragg reflectors; Gallium arsenide; Optical interconnections; Optical receivers; Optical surface waves; Plugs; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619083

Filename

619083