Title :
EXTIGATE: The Ultimate Process Architecture for sub-0.25μm CMOS Technologies
Author :
Schwalke, U. ; Kerber, M. ; Koller, K. ; Jacobs, H.
Author_Institution :
Siemens, Corp. R&D, Microelectronics, 81730 Munich, Germany
Abstract :
In this work we present the novel process architecture EXTIGATE (EXtended Trench Isolation GAte TEchnology) which solves major problems associated with shallow-trench-isolation (STI) and n+/p+ dual workfunction gate technology. These achievements are realized without any increase in process complexity or cost. Furthermore, the process window is enlarged leading to an extremely robust CMOS process.
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy