Title :
Silicon germanium heterobipolar transistor for high speed operation
Author :
Kasper, E. ; Gruhle, A.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
The high frequency dilemma (limited high frequency operation only possible with high base sheet resistivities) of silicon bipolar junction transistors can be overcome by the application of heterostructures. In a first part we give an overview about the SiGe base heterobipolar-transistor (SiGe-HBT) concept and about the devices realized so far. In the second part we report about our SiGe-HBT device work based on Si-MBE grown structures. Experimental results obtained include transit frequencies up to 100 GHz, maximum oscillation frequencies up to 65 GHz, low base sheet resistivities (0.7 kΩ/□ to 3 kΩ/□), encouraging noise properties (<2 dB at 10 GHz) and successful tests in 24 GHz oscillators
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; 100 GHz; 24 GHz oscillators; 65 GHz; Si-MBE grown structures; SiGe; SiGe base heterobipolar-transistor; SiGe-HBT; heterostructures; high base sheet resistivities; high frequency dilemma; high speed operation; limited high frequency operation; maximum oscillation frequencies; noise properties; overview; silicon bipolar junction transistors; silicon germanium heterobipolar transistor; transit frequencies; Conductivity; Doping profiles; Fluctuations; Frequency; Germanium silicon alloys; Niobium; Silicon germanium; Testing; Tunneling; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303063
