Title :
A high performance 6-18 GHz five bit MMIC phase shifter [using MESFETS]
Author :
Boire, D.C. ; Marion, R.
Author_Institution :
Lockheed Sanders Avionics, Nashua, NH, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A five bit MMIC phase shifter is described with the best reported performance levels over the 6 to 18 GHz band. The phase shifter was specifically designed to be tolerant of expected processing variations and to minimize production costs. Test methodology for the phase shifter is described that reduced test time and data requirements. Data from several wafer lots is presented.
Keywords :
MESFET integrated circuits; MMIC phase shifters; design for manufacture; field effect MMIC; field effect digital integrated circuits; integrated circuit design; integrated circuit testing; 6 to 18 GHz; MMIC phase shifter; data requirements; expected processing variations; production costs; test methodology; test time; wafer lots; Circuits; Costs; FETs; Frequency; Insertion loss; MMICs; Phase shifters; Phased arrays; Production; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529009
