GaInP/GaAs heterostructure bipolar transistors with high gain and high breakdown voltages

Author

Abid, Z. ; McAlister, S.P. ; McKinnon, W.R.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada

fYear

1993

fDate

2-4 Aug 1993

Firstpage

69

Lastpage

74

Abstract

GaInP/GaAs/GaInP double heterostructure bipolar transistors,emitter area of 50×50 (μm)², with a DC gain of 445 and breakdown voltage (V_CBO) of more than 17 V have been fabricated. The Gummel plots give an ideality factor of 1.01 for the collector current and 1.1 for the base current, and the devices show gain down to collector currents of 10^-9A. A higher gain, more than 800, was recorded for a smaller device, 20×50 (μm) ² emitter, but the breakdown voltages were lower

Keywords

III-V semiconductors; electric breakdown of solids; gallium arsenide; gallium compounds; heterojunction bipolar transistors; power transistors; 17 V; DC gain; GaInP-GaAs; Gummel plots; base current; breakdown voltages; collector current; emitter area; heterostructure bipolar transistors; ideality factor; Bipolar transistors; Breakdown voltage; Councils; Electric breakdown; Etching; Fabrication; Gallium arsenide; Heterojunctions; Passivation; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303070

Filename

303070