Title :
GaInP/GaAs heterostructure bipolar transistors with high gain and high breakdown voltages
Author :
Abid, Z. ; McAlister, S.P. ; McKinnon, W.R.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
Abstract :
GaInP/GaAs/GaInP double heterostructure bipolar transistors,emitter area of 50×50 (μm)2, with a DC gain of 445 and breakdown voltage (VCBO) of more than 17 V have been fabricated. The Gummel plots give an ideality factor of 1.01 for the collector current and 1.1 for the base current, and the devices show gain down to collector currents of 10-9A. A higher gain, more than 800, was recorded for a smaller device, 20×50 (μm) 2 emitter, but the breakdown voltages were lower
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; gallium compounds; heterojunction bipolar transistors; power transistors; 17 V; DC gain; GaInP-GaAs; Gummel plots; base current; breakdown voltages; collector current; emitter area; heterostructure bipolar transistors; ideality factor; Bipolar transistors; Breakdown voltage; Councils; Electric breakdown; Etching; Fabrication; Gallium arsenide; Heterojunctions; Passivation; Photonic band gap;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303070
