Title :
A novel linearizing technique for GaAs power amplifiers
Author :
Yamaguchi, Y. ; Muraguchi, M. ; Nakagawa, T. ; Nakatsugawa, M. ; Tsukahara, T.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A novel linearizing technique for GaAs power amplifier is proposed. This technique is introduced for digital mobile communication systems that employ /spl pi//4-shift QPSK modulation. It allows the power amplifier to offer both high efficiency and low adjacent-channel power leakage (ACP). A linearized amplifier achieves a power added efficiency (PAE) level approximately 10% higher than that of an ordinary amplifier.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; digital radio; field effect MMIC; gallium arsenide; land mobile radio; linearisation techniques; quadrature phase shift keying; radiofrequency amplifiers; /spl pi//4-shift QPSK modulation; GaAs; GaAs power amplifiers; digital mobile communication systems; high efficiency; linearizing technique; low adjacent-channel power leakage; power added efficiency; DC-DC power converters; Envelope detectors; Gallium arsenide; High power amplifiers; Linearity; Power amplifiers; Power generation; Read only memory; Virtual colonoscopy; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529013
