DocumentCode
1943030
Title
High-Speed Control of Microwave Signals using InP: Fe Photoconductive Devices
Author
Andersson, Ingmar ; Eng, Sverre T.
Author_Institution
Department of Electrical Measurements, Chalmers University of Technology, S-412 96 Gothenburg, Sweden
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
1073
Lastpage
1076
Abstract
The feasibility of using InP: Fe photoconductive devices as high-speed microwave switches has been demonstrated in the 0.01 - 10 GHz frequency range, by fabricating a fiber optic compatible modified interdigitated gap (MIG) structure. Rise and fall times of less than 100 ps have been measured and a power switching ratio (PSWR) of 13 dB at 10 GHz has been achieved when illuminating the device with 10 mW of effective optical power (CW) from a semiconductor laser with a fiber pigtail.
Keywords
Frequency; High speed optical techniques; Indium phosphide; Iron; Microwave devices; Optical fibers; Optical switches; Photoconducting devices; Power measurement; Power semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436836
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