Title :
Latch-Up Free VLSI CMOS Circuits Considering Power-On Transients
Author :
Reczek, W. ; Winnerl, J. ; Pribyl, W.
Author_Institution :
Siemens AG, Components Group, Otto-Hahn-Ring 6, D-8000 Munchen 83, F.R.G.
Abstract :
Power-on latch-up is depending on circuit design and technology. The use of an epilayer increases the latch-up hardness of conventional CMOS (LOGIC) while for n-well CMOS with VBB generator (DRAM) the latch-up suszeptibility is increased because of the capacitive voltage divider in the periphery and the high effective substrate shunt resistance. Therefore protection circuits provide latch-up free operation.
Keywords :
CMOS technology; Circuit synthesis; Circuit testing; Equivalent circuits; Power generation; Protection; Random access memory; Research and development; Very large scale integration; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France