• DocumentCode
    1943079
  • Title

    Latch-Up Free VLSI CMOS Circuits Considering Power-On Transients

  • Author

    Reczek, W. ; Winnerl, J. ; Pribyl, W.

  • Author_Institution
    Siemens AG, Components Group, Otto-Hahn-Ring 6, D-8000 Munchen 83, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    Power-on latch-up is depending on circuit design and technology. The use of an epilayer increases the latch-up hardness of conventional CMOS (LOGIC) while for n-well CMOS with VBB generator (DRAM) the latch-up suszeptibility is increased because of the capacitive voltage divider in the periphery and the high effective substrate shunt resistance. Therefore protection circuits provide latch-up free operation.
  • Keywords
    CMOS technology; Circuit synthesis; Circuit testing; Equivalent circuits; Power generation; Protection; Random access memory; Research and development; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436839