Fabrication and characterization of planar integrated Schottky devices for very high frequency mixers

Author

Mehdi, I. ; Siegel, P. ; Mazed, M.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

94

Lastpage

102

Abstract

Many millimeter-wave mixers and frequency multipliers today still employ a whisker contacted Schottky diode as the nonlinear device. In order to reduce the risk and assembly cost associated with these critical receiver components for NASA´s present and future space missions, the authors have developed a novel fabrication procedure that integrates a planar Schottky diode with the mixer circuitry thus greatly simplifying the assembly and testing of the diode circuits. The process and DC results obtained so far will be discussed along with some preliminary RF results at 200 GHz

Keywords

Schottky-barrier diodes; microwave integrated circuits; mixers (circuits); 200 GHz; DC results; assembly cost; fabrication procedure; millimeter-wave mixers; planar Schottky diode; planar integrated Schottky devices; receiver components; very high frequency mixers; Circuit testing; Fabrication; Gallium arsenide; Instruments; Optical filters; Optical pumping; Optical waveguides; Radio frequency; Schottky diodes; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303074

Filename

303074