Title :
GaAs multibit delta-sigma A/D converters based upon a new comparator design
Author :
Hickling, R.M. ; Yagi, M.N. ; Salman, H.H.
Author_Institution :
TechnoConcepts Inc., Newbury Park, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
In this paper, the design of multibit delta-sigma converters based upon a new comparator bank structure is described. The comparator bank approach eliminates the need for comparator threshold terminals, allowing each of the individual latched comparators to operate upon the same differential input signal. This new comparator design was incorporated into a complete four-bit delta-sigma modulator which was fabricated on a 0.6 /spl mu/m GaAs MESFET process.
Keywords :
III-V semiconductors; MESFET integrated circuits; comparators (circuits); gallium arsenide; sigma-delta modulation; 0.6 micron; 1.6 GHz; 4 bit; A/D converters; GaAs; GaAs MESFET process; comparator bank structure; differential input signal; four-bit delta-sigma modulator; multibit delta-sigma ADC; Circuit testing; Current control; Delta modulation; Dynamic range; Gallium arsenide; Linearity; Tail; Threshold voltage; Virtual colonoscopy; Voltage control;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529017