Title :
CMOS Technology for CCD Video Memories
Author :
Davids, G.J.T. ; Hartog, P.B. ; Slotboom, J.W. ; Streutker, G. ; van der Sijde, A.G. ; Wiertsema, W.
Author_Institution :
Philips Research Laboratories, PO Box 80.000, NL-5600 JA Eindhoven, The Netherlands
Abstract :
A new double polysilicon gate technology for an 835 Kbit CCD video memory with a cell of 4×4 ¿m2 [1] is presented. The spacer technology for the LDD MOSFET´s is integrated in the isolation of the double poly CCD structure. This makes the CCD fully compatible with standard CMOS processing and relaxes the anisotropic plasma etching of second poly electrodes. The charge transfer efficiency is high for a SCCD without fat zero (¿ ¿ 2.10¿4). Measurements and calculations on the charge transfer show no degradation for doping concentrations below 8.1015 cm¿3. The leakage current density is measured on the 835 Kbit memory and agrees with earlier measurements on a 308 Kbit CCD video memory [2,6].
Keywords :
Anisotropic magnetoresistance; CMOS process; CMOS technology; Charge coupled devices; Charge transfer; Current measurement; Density measurement; Isolation technology; Plasma measurements; Space technology;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
