DocumentCode :
1943139
Title :
Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
Author :
Marsh, C.D. ; Booker, G.R. ; Nejim, A. ; Giles, L.F. ; Hemment, P.L.F. ; Li, Y. ; Chater, R.J. ; Kilner, J.A. ; Wainwright, S. ; Hall, S.
Author_Institution :
Dept. of Materials, University of Oxford, UK
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
8
Lastpage :
9
Keywords :
Annealing; Chemical analysis; Electric variables measurement; Etching; Microstructure; Oxygen; Predictive models; Semiconductor device modeling; Semiconductor thin films; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664770
Filename :
664770
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1943139
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