Title :
Effects of Mechanical Stress on MOS Structures with TiSi2 Gates
Author :
Reuters, P.J. ; Giese, J. ; Offenberg, M. ; Richter, W. ; Ewert, S. ; Balk, P.
Author_Institution :
Inst. of Semiconductor Electronics and Inst. of Physics, Technical University Aachen, D-5100 Aachen, F.R.G.
Abstract :
MOS capacitors with TiSi2 gate electrode show electron trapping, interface state generation upon electron injection and reduction of breakdown strength; these effects become more pronounced for electrodes with increasing thickness. Evidence is presented that this degradation of the insulator is due to mechanical stress in the MOS system caused by the gate.
Keywords :
Compressive stress; Degradation; Electric breakdown; Electrodes; Electron traps; Insulation; Interface states; MOS capacitors; Semiconductor films; Silicides;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
