Device Characterisation of a High Density Half-Micron CMOS Process

The device characterisation and the ringoscillator performance of a high density half-micron CMOS process were studied. A novel recessed field isolation technology, twin retrograde wells, N⁺ poly-silicon gate material and lightly doped drain structures for both the n-and p-channel devices were used in the device fabrication. The device properties and the ringoscillator performance will be presented.