Title :
Flow modulation growth of III-V compound semiconductors using a multichamber OMVPE reactor
Author :
Pitts, B.L. ; Emerson, D.T. ; Matragrano, M.J. ; Whittingham, K.L. ; Butterfield, B.P. ; Shealy, J.R.
Author_Institution :
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber organometallic vapor phase epitaxy (OMVPE) apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. High purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm2/V s, respectively. Excellent transport and optical properties were also observed for GaInP-GaAs and GaInAs-InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices
Keywords :
III-V semiconductors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP; GaInP-GaAs; III-V compound semiconductors; flow modulation growth; group III rich zone; group V rich zone; mobilities; multichamber OMVPE reactor; multiwafer capability; optical properties; organometallic vapor phase epitaxy; substrate rotation; superlattice structures; transport properties; Epitaxial growth; Gallium arsenide; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Phase modulation; Substrates; Superlattices; Temperature; Valves;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303077
