Title :
SOI Technologies : Their Past, Present and Future
Author_Institution :
Philips Research Laboratories, PO Box 80.000, NL-5600 JA Eindhoven, The Netherlands
Abstract :
Technologies applied for silicon on insulator (SOI) are briefly described as well as their specific properties. Conditions of realizing SOI not only imply obtaining a perfect monocrystalline silicon layer but also an undamaged stack of (SOI) layers and a defect-free substrate. Technological problems encountered by applying the various SOI techniques are described and discussed in some detail. Past, present and future of SOI will be evaluated in some aspects.
Keywords :
CMOS technology; Free electron lasers; Gas lasers; Insulation; Laboratories; Lamps; Laser theory; Power lasers; Silicon on insulator technology; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
