DocumentCode :
1943276
Title :
A hybrid quantum-classical model for transport in tunneling heterostructures
Author :
Fernando, Chenjing L. ; Frensley, William R.
Author_Institution :
Erik Jonsson Sch. of Eng. & Comput. Sci., Texas Univ., Richardson, TX, USA
fYear :
1993
fDate :
2-4 Aug 1993
Firstpage :
152
Lastpage :
158
Abstract :
Several models have been developed to evaluate the current-voltage characteristics of the resonant tunneling diode (RTD). The current density predicted by both flat-band model and Thomas-Fermi approximation (or zero-current model) fails to reproduce the experimental results. We believe that this disagreement is due to the assumption of perfect electron coherence in the tunneling theory. An adjusted Thomas-Fermi model which includes a series resistance at either of the contact layers has been tried out, but the result is still unsatisfactory. A hybrid quantum-classical approach is suggested to evaluate self-consistently the electron current. The method couples the quantum-tunneling current obtained by solving the Schrodinger equation in the tunneling region with the classical drift-diffusion current in the contact layers. The resulting current continuity equation is solved self-consistently with Poisson´s equation. It shows that the hybrid quantum-classical model gives much more realistic I(V) curves than other models
Keywords :
Schrodinger equation; carrier mobility; resonant tunnelling devices; semiconductor device models; tunnel diodes; Poisson´s equation; Schrodinger equation; Thomas-Fermi approximation; adjusted Thomas-Fermi model; classical drift-diffusion current; contact layers; current continuity equation; current density; current-voltage characteristics; flat-band model; hybrid quantum-classical approach; hybrid quantum-classical model; models; perfect electron coherence; quantum-tunneling current; realistic I(V) curves; resonant tunneling diode; self-consistently; series resistance; tunneling heterostructures; tunneling theory; zero-current model; Coherence; Contact resistance; Current density; Current-voltage characteristics; Diodes; Electrons; Poisson equations; Predictive models; Resonant tunneling devices; Schrodinger equation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
Type :
conf
DOI :
10.1109/CORNEL.1993.303081
Filename :
303081
Link To Document :
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