Title :
A proposed Stark shift electrooptic device operating in visible wavelengths
Author :
Chowdhury, Andalib A. ; Rashed, M.Mahbub ; Maziar, C.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
We report calculations of transition energies as a function of applied electric field for different combinations of GaP and AlP thicknesses. Most of the calculated red shifted transition energies fall within the orange/yellow region of the visible spectrum. These results may prove to be useful in designing Stark shift electrooptic devices operating in visible wavelengths
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium compounds; semiconductor quantum wells; spectral line shift; AlP; AlP thicknesses; GaP; Stark shift electrooptic device; applied electric field; calculated red shifted transition energies; orange/yellow region; transition energies; visible spectrum; visible wavelengths; Capacitance-voltage characteristics; Charge carrier processes; Electromagnetic wave absorption; Electron optics; Electrooptic devices; Lattices; Microelectronics; Optical superlattices; Potential well; Quantum well devices;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303082
