Author :
Blache, F. ; Boucherez, E. ; Carpentier, D. ; Devaux, F. ; Duchemin, C. ; Ferling, D. ; Giraudet, L. ; Goeth, A. ; Hayano, J.M. ; Jorg, W. ; Kabs, J. ; Kerboeuf, S. ; Landreau, J. ; Lecoq, V. ; Lefevre, R. ; Louis, S. ; Muller, A. ; Pagnod, P. ; Peloso, P
Author_Institution :
GIE Groupement d´Interet Economique, Opto+, Marcoussis, France
Abstract :
A low cost integration technology has been developed to assemble 2.5 and 10 Gb/s photodiodes. It relies on flip-chipped devices with lensed fibres positioned in V-grooves. For 2.5 Gb/s the photodiode, the fibre and the transimpedance amplifier are integrated on a single Si motherboard compatible with mounting in a mini-dil module. The sensitivity is -23.5 dBm at 10/sup -10/ BER with no error floor.
Keywords :
flip-chip devices; integrated optoelectronics; modules; optical receivers; photodetectors; photodiodes; silicon; 10 Gbit/s; 2.5 Gbit/s; Si; Si motherboard; V-grooves; edge photodiode; flip-chipped devices; lensed fibres; low cost integration technology; low cost photoreception; mini-dil module; sensitivity; transimpedance amplifier; Assembly; Costs; Etching; Gold; Optical fiber devices; Optical fiber testing; Optical receivers; Parasitic capacitance; Photodiodes; Tin;
