Title :
A Novel 1500 Volt IGBT Device with Improved Turn-Off Performance
Author :
Blake, J. ; Brockman, H.E. ; Cooper, R.W.
Author_Institution :
Philips Research Laboratories, Redhill, Surrey U.K.
Abstract :
An Insulated Gate Bipolar Transistor design based on bulk silicon material capable of blocking voltages in excess of 1500V is reported. The device incorporates a detailed anode shorting pattern which inhibits hole injection during on-state, and reduces turn-off times.
Keywords :
Anodes; Cathodes; Conducting materials; Conductivity; Electrons; Equivalent circuits; Insulated gate bipolar transistors; Laboratories; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
