DocumentCode
1943313
Title
A Novel 1500 Volt IGBT Device with Improved Turn-Off Performance
Author
Blake, J. ; Brockman, H.E. ; Cooper, R.W.
Author_Institution
Philips Research Laboratories, Redhill, Surrey U.K.
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
57
Lastpage
59
Abstract
An Insulated Gate Bipolar Transistor design based on bulk silicon material capable of blocking voltages in excess of 1500V is reported. The device incorporates a detailed anode shorting pattern which inhibits hole injection during on-state, and reduces turn-off times.
Keywords
Anodes; Cathodes; Conducting materials; Conductivity; Electrons; Equivalent circuits; Insulated gate bipolar transistors; Laboratories; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436849
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