Full Quantum Investigation of Low Field Mobility in Short-Channel Silicon Nanowire FETS

Author

Poli, Stefano ; Pala, Marco G.

Author_Institution

Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A computational study on short-channel silicon nanowire-FETs is proposed by means of a 3-D full-quantum treatment within the coupled mode space non-equilibrium Green´s function formalism. Electron-phonon interaction and surface roughness are considered as limiting scattering mechanisms. The dependence of the effective mobility on the channel length is addressed showing the importance of quantum-phase coherence in ultra-scaled devices and analyzing the impact of the different scattering mechanisms. The scaling trends for the back-scattering coefficient is also investigated.

Keywords

Green´s function methods; electron-phonon interactions; elemental semiconductors; field effect transistors; nanowires; semiconductor device models; semiconductor quantum wires; silicon; surface roughness; FET; back-scattering coefficient; coupled mode space non-equilibrium Green function; electron-phonon interaction; low field mobility; quantum-phase coherence; silicon nanowire; surface roughness; Collision mitigation; Electrons; FETs; Fluctuations; Optical scattering; Particle scattering; Phonons; Rough surfaces; Silicon; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290193

Filename

5290193