Title :
On the feasibility of intersubband transition lasers
Author :
Afzali-Kushaa, A. ; Haddad, G.I. ; Norris, T.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The feasibility and potential of laser sources based on intersubband transitions in quantum wells and strained layers will be presented. The basic schemes and proposed structures for both electrically and optically pumped devices are discussed. Both conduction band and valence band quantum wells as well as strained layers may be used as the active layer of these lasers. These sources can be either optically or electrically pumped with each having its own advantages. Various material systems which are appropriate for these applications will be described
Keywords :
laser theory; laser transitions; optical pumping; semiconductor lasers; active layer; conduction band; electrically pumped devices; intersubband transition lasers; laser sources; material systems; optically pumped devices; quantum wells; strained layers; valence band quantum wells; Carrier confinement; Infrared detectors; Laser transitions; Lattices; Optical materials; Optical modulation; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor materials;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303083
