Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects

Author

Choi, SeongWook ; Park, Sooyoung ; Park, Hong-Hyun ; Park, Young June ; Baek, Chang-Ki

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (DeltaV_th) and drain current degradation (DeltaI_D) including the mobility degradation due to the traps. The results can be used, for example, to predict DeltaV_th in the On-the-fly NBTI measurement. Moreover, the statistical modeling for the degradation of I_D due to the spatial distribution of the interface trap is investigated.

Keywords

carrier mobility; interface states; power MOSFET; semiconductor device models; statistical analysis; NBTI mobility degradation simulation; NBTI stress; PMOSFET device; carrier mobility model; discrete interface trap; drain current degradation; spatial distribution; statistical modeling; threshold voltage shift; Computational modeling; Computer science; Computer simulation; Degradation; Hydrogen; Niobium compounds; Predictive models; Size measurement; Stress measurement; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290198

Filename

5290198