DocumentCode
1943420
Title
High-Speed Optical Detection Up to 2.5Gbit/s with a Double Polysilicon Self-Aligned Silicon Bipolar Transistor
Author
Bock, W. ; Treitinger, L. ; Prettl, W.
Author_Institution
Siemens AG, Zentrale Forschung und Entwicklung, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found lo con sist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830nm wavelength up to data rates of 2.5Gbit/s.
Keywords
Bipolar transistors; High speed optical techniques; Laser excitation; Optical detectors; Optical modulation; Optical pulse shaping; Optical sensors; Photoconductivity; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436854
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