DocumentCode
1943434
Title
Higher Efficiency of CMOS-Process-Compatible Photodiodes in SOI-Technique by Reflecting Films
Author
Knospe, K. ; Goser, K.
Author_Institution
Bauelemente der Elektrotechnik, Universitÿt Dortmund, D-4600 Dortmund, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A voltage of several volts was achieved on chip by integration of photodiodes in polycristalline silicon layers in SOI-technique. For increased quantum efficiency suitable layers were deposited at the Si - poly-Si boundary. These layers caused no restrictions for successing process steps and temperature treatments. A comparison of measured quantum efficiencies with theoretical values has been made.
Keywords
Circuits; Etching; Manufacturing; Optical films; Optical reflection; Photodiodes; Quantum computing; Quantum mechanics; Radiative recombination; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436855
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