Title :
Comparative Study on Si and Ge p-Type Nanowire FETs Based on Full-Band Non-Equilibrium Green´s Function Simulation
Author :
Minari, Hideki ; Mori, Nobuya
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
Atomistic hole transport simulation based on a nonequilibrium Green´s function method and tight-binding approximation has been performed for Si and Ge p-type nanowire FETs with the diameter ranging from 1.6 nm to 3 nm. Simulation results show that the drain current density increases with increasing the nanowire diameter and the difference in drain current between Ge and Si nanowire FETs becomes smaller with reducing the nanowire diameter.
Keywords :
Green´s function methods; elemental semiconductors; field effect transistors; germanium; nanowires; semiconductor device models; silicon; Ge; Si; atomistic hole transport simulation; drain current density; full-band nonequilibrium Green´s function; p-type nanowire FET; size 1.6 nm to 3 nm; tight-binding approximation; Computational modeling; Crystalline materials; Effective mass; FETs; Germanium; Green´s function methods; Insulation; MOSFETs; Nanoscale devices; Quantum computing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290200
