Semiclassical Monte Carlo with Quantum-Confinement Enhanced Scattering: Quantum Correction and Application to Short-Channel Device Performance Vs. Mobility for Biaxial-Tensile-Strained Silicon nMOSFETs

Author

Shi, Ningyu ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A model of valley-dependent quantum-confinement-enhanced scattering has been added to existing quantum corrections in our full band Monte Carlo simulator, Monte Carlo of the University of Texas (MCUT). The simulator was then calibrated to fit mobility curves, both strained and unstrained, by adjusting surface roughness parameters. By comparing mobility and device simulation results, we find significant deviations in short channel strained Si nMOSFET performance - some potentially beneficial - from expectations based on mobility and thermal velocity alone.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; semiconductor device models; silicon; Si; biaxial-tensile-strained silicon nMOSFET; mobility curves; quantum correction; quantum-confinement enhanced scattering; semiclassical Monte Carlo; short-channel device performance; surface roughness parameters; Brillouin scattering; Capacitive sensors; Conductivity; Effective mass; MOSFETs; Monte Carlo methods; Particle scattering; Potential well; Quantum mechanics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290202

Filename

5290202