• DocumentCode
    1943535
  • Title

    Electronic Properties of Silicon Interfaces Prepared by Direct Bonding

  • Author

    Bengtsson, S. ; Engström, O.

  • Author_Institution
    Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Göteborg, Sweden
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by direct bonding has been investigated. Surface potentials of N-N and P-P interfaces and recombination currents in P-N junctions depend on surface and heat treatments. In both cases lower magnitudes were measured in samples pre-treated in HF compared to samples pre-treated in HNO3. Bonded Si-SiO2 interfaces with interface state densities of about 1011 cm¿2 eV¿1 and low flatband voltages have been achieved.
  • Keywords
    Annealing; Conductivity; Electrical resistance measurement; Fixtures; Furnaces; Silicon; Spontaneous emission; Surface treatment; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943535