Application of the first-order bipolar model to harmonic distortion analysis of HBT´s

Author

Meskoob, Bahman ; Prasad, Sheila

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

245

Lastpage

254

Abstract

Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT´s). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; harmonic analysis; heterojunction bipolar transistors; indium compounds; power transistors; semiconductor device models; InGaAs-InAlAs-InP; cutoff; first-order bipolar model; first-order device physics; hard saturation; harmonic distortion analysis; high power levels; inverted HBT; large-signal models; medium power levels; Current measurement; Equations; Fabrication; Gallium arsenide; Harmonic analysis; Harmonic distortion; Heterojunction bipolar transistors; Physics; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303093

Filename

303093