• DocumentCode
    1943620
  • Title

    Acceleration 1/f Noise in Silicon MOSFETs

  • Author

    Birbas, Amn ; Peng, Q. ; van der Ziel, A. ; van Rheenen, A.D.

  • Author_Institution
    Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    It is usually assumed that the 1/f noise in Si-MOSFETs is limited by collision 1/f noise. We found this to be the case for devices with relatively short channel lengths (L≪10¿m) but for channels of intermediate length (10¿m≪L≪194¿m) we found that the Hooge parameter varies as L2. We attributed this to acceleration of the electrons by the applied field, accompanied by Bremsstrahlung emission and current 1/f noise generation. This is a new noise source.
  • Keywords
    Acceleration; Density estimation robust algorithm; Electron emission; Equations; Genetic expression; MOSFETs; Noise generators; Semiconductor device noise; Silicon; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943620