DocumentCode
1943638
Title
A Contactless Technique for the Characterization of Internally Gettered CZ Silicon
Author
Briere, M.A.
Author_Institution
Hahn-Meitner-Institut Berlin GmbH, Dept. Dataprocessing and Electronics, Glienicker Strasse 100, D-1000 Berlin 39, F.R.G.; IBM East Fishkill Laboratories, Hopewell Jnct., NY 12533. U.S.A.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A characterization technique is described which is capable of measuring the salient electronic properties of the layered structure formed during the internal gettering process in Czochralski grown silicon. The method is contactless and involves the use of a two laser, pump-probe, system to measure the carrier lifetimes in the defect-free-zone (DFZ) and the bulk as well as to measure the width of the DFZ. Excellent agreement is found with the results of theory and those of the standard bevel and etch method.
Keywords
Absorption; Etching; Gettering; Laser excitation; Laser theory; Manufacturing; Optical pulse generation; Probes; Pump lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436865
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