Title :
A Trench Isolated High Speed Bipolar Process for a 10K Gate, 950MHz, VLSI Circuit
Author :
Mallardeau, C. ; Roche, M. ; Depey, M. ; Ova, F. Dell ; Thomas, D. ; Celi, D. ; Hunt, P. ; Hefner, A.
Author_Institution :
SGS-Thomson Microelectronics, BP 217, F-38019 Grenoble Cedex, France
Abstract :
A one micron bipolar process using trench isolation and polysilicon emitter has been evaluated and characterised. The demonstration of yield was achieved on a 10000 gate VLSI circuit.
Keywords :
Application software; Circuits; Etching; Isolation technology; Microelectronics; Oxidation; Parasitic capacitance; Planarization; Resists; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
