Title :
High performance 1.3 /spl mu/m vertical-cavity surface-emitting lasers with oxygen-implanted confinement regions and wafer-bonded mirrors
Author :
Qian, Y. ; Zhu, Z.H. ; Lo, Y.H. ; Huffaker, D.L. ; Deppe, D.G. ; Hou, H.Q. ; Hammons, B.E. ; Lin, W. ; Yu, Y.K.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We show schematically the oxygen-implanted VCSELs. The devices consist of an oxygen implanted p-GaAs-AlGaAs (28 pairs) mirror, AlGaInAs-InP strain-compensated multiple quantum well (SC-MQW) cavity layers, and a top ZnSe/MgF (6 pairs) dielectric mirror.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; ion implantation; laser mirrors; laser transitions; optical fabrication; optical transmitters; quantum well lasers; AlGaInAs-InP; AlGaInAs-InP strain-compensated multiple quantum well lasers; GaAs-AlGaAs; MgF; ZnSe; cavity layers; oxygen-implanted VCSELs; oxygen-implanted confinement regions; p-GaAs-AlGaAs mirror; top ZnSe-MgF dielectric mirror; vertical-cavity surface-emitting lasers; wafer-bonded mirrors; Dielectric substrates; Gallium arsenide; Mirrors; Oxygen; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619098
