Title :
Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.
Keywords :
III-V semiconductors; cooling; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser cavity resonators; laser mirrors; laser transitions; semiconductor lasers; surface emitting lasers; 1.55 mum; 120 mA; 77 K; GaInAsP-InP; GaInAsP/InP mirror; VCSEL; active layer; active region; carrier profile; conductive mirror; dielectric p-side DBR laser; electrical confinement; etched; generated heat dissipation; long wavelength VCSELs; monolithic GaInAsP-InP mirror; monolithic integration; n-side mirror; optical confinement; pulsed laser; quantum well lasers; threshold current; Distributed Bragg reflectors; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Lattices; Mirrors; Reflectivity; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619099
