Title :
Modelling Diffusion in Silicides
Author :
Moynagh, P B ; Brown, A.A. ; Rosser, P.J.
Author_Institution :
STC Technology Ltd., London Road, Harlow, GB-Essex CM17 9NA, Great-Britain
Abstract :
This paper outlines models for the redistribution of dopant during the incorporation of silicides in VLSI processes.
Keywords :
Annealing; Boron; Cobalt; Conductivity; Integrated circuit interconnections; Scanning electron microscopy; Semiconductor process modeling; Silicides; Silicon; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
